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SI6543DQ vishay siliconix document number: 70181 s-49534erev. c, 06-oct-97 www.vishay.com faxback 408-970-5600 2-1 dual n- and p-channel 30-v (d-s) mosfet
v ds (v) r ds(on) ( ) i d (a) n - channel 30 0.065 @ v gs = 10 v 3.9 n - channel 30 0.095 @ v gs = 4.5 v 3.1 p - channel 30 0.085 @ v gs = 10 v 2.5 p - channel 30 0.19 @ v gs = 4.5 v 1.8 SI6543DQ d 1 s 1 s 1 g 1 1 2 3 4 8 7 6 5 d 2 s 2 s 2 g 2 tssop-8 top view d 1 g 1 s 1 n-channel mosfet s 2 g 2 d 2 p-channel mosfet
parameter symbol n-channel p-channel unit drain-source voltage v ds 30 30 v gate-source voltage v gs 20 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 3.9 2.5 a continuous drain current (t j = 150 c) a t a = 70 c i d 3.1 2.1 a pulsed drain current i dm 20 20 a continuous source current (diode conduction) a i s 1.25 1.25 maximum power dissipation a t a = 25 c p d 1.0 w maximum power dissipation a t a = 70 c p d 0.64 w operating junction and storage temperature range t j , t stg 55 to 150 c parameter symbol n- or p-channel unit maximum junction-to-ambient a r thja 125 c/w notes a. surface mounted on fr4 board, t 10 sec. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
SI6543DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70181 s-49534erev. c, 06-oct-97

parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 1.0 v gate threshold v oltage v gs(th) v ds = v gs , i d = 250 a p-ch 1.0 v gate - body leakage i gss v ds = 0 v , v gs = 20 v n-ch 100 na gate - body leakage i gss v ds = 0 v , v gs = 20 v p-ch 100 na zgvl dic i v ds = 30 v, v gs = 0 v n-ch 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v p-ch 1 a zero gate v oltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55 c n-ch 25 a v ds = 30 v, v gs = 0 v, t j = 55 c p-ch 25 on - state drain current a i d(on) v ds 5 v, v gs = 10 v n-ch 15 a on - state drain current a i d(on) v ds 5 v, v gs = 10 v p-ch 15 a dis os r i a v gs = 10 v, i d = 3.9 a n-ch 0.043 0.065 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 2.5 a p-ch 0.066 0.085 drain - source on - state resistance a r ds( on ) v gs = 4.5 v, i d = 3.1 a n-ch 0.075 0.095 v gs = 4.5 v, i d = 1.8 a p-ch 0.125 0.19 forward transconductance a g fs v ds = 15 v, i d = 3.9 a n-ch 7 s forward t ransconductance a g fs v ds = 15 v, i d = 2.5 a p-ch 5 s diode forward voltage a v sd i s = 1.25 a, v gs = 0 v n-ch 0.8 1.2 v diode forward v oltage a v sd i s = 1.25 a, v gs = 0 v p-ch 0.8 1.2 v dynamic b total gate charge q g nch l n-ch 9.8 15 c total gate charge q g n-channel p-ch 8.7 15 c gate - source charge q gs n channel v ds = 10 v, v gs = 10 v, i d = 3.9 a n-ch 2.1 nc gate - source charge q gs p-channel v ds =10vv gs =10vi d =25a p-ch 1.9 nc gate - drain charge q gd v ds = 10 v, v gs = 10 v, i d = 2.5 a n-ch 1.6 gate - drain charge q gd p-ch 1.3 turn - on delay t ime t d(on) nch l n-ch 9 15 turn - on delay t ime t d(on) nch l p-ch 7 15 rise time t r n-channel v dd = 10 v , r l = 10 n-ch 6 18 rise t ime t r v dd = 10 v , r l = 10 i d 1 a, v gen = 10 v, r g = 6 p-ch 9 18 turn - of f delay time t d(off) p-channel v10vr10 n-ch 18 27 ns turn - of f delay t ime t d(off) v dd = 10 v, r l = 10 i d 1 a, v gen = 10 v, r g = 6 p-ch 14 27 ns fall time t f i d 1 a, v gen 10 v, r g 6 n-ch 6 15 fall t ime t f p-ch 8 15 source-drain rr ti t rr i f = 1.25 a, di/dt = 100 a/ s n-ch 48 80 reverse recovery time t rr i f = 1.25 a, di/dt = 100 a/ s p-ch 46 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
SI6543DQ vishay siliconix document number: 70181 s-49534erev. c, 06-oct-97 www.vishay.com faxback 408-970-5600 2-3

0 4 8 12 16 20 02468 0 2 4 6 8 10 0246810 0.4 0.8 1.2 1.6 2.0 50 25 0 25 50 75 100 125 150 0 0.04 0.08 0.12 0.16 0.20 0 4 8 12 16 20 0 150 300 450 600 750 0 5 10 15 20 25 30 0 4 8 12 16 20 02468 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs = 10 thru 6 v 5 v v gs gate-to-source voltage (v) drain current (a) i d 25 c t c = 55 c gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v ds = 10 v i d = 3.9 a on-resistance ( r ds(on) w ) i d drain current (a) capacitance on-resistance vs. junction temperature v gs = 10 v i d = 3.9 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) w ) v gs = 10 v v gs = 4.5 v 4 v 3 v 125 c
SI6543DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70181 s-49534erev. c, 06-oct-97

0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 1. duty cycle, d = 2. per unit base = r thja = 125 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 notes: 4. surface mounted p dm t 2 0 0.04 0.08 0.12 0.16 0.20 0246810 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 50 25 0 25 50 75 100 125 150 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) w ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) t j = 150 c t j = 25 c i d = 3.9 a i d = 250 m a variance (v) v gs(th) 20 10 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 time (sec) power (w) 30 25 20 15 10 5 0 0.01 0.1 1 10 30
SI6543DQ vishay siliconix document number: 70181 s-49534erev. c, 06-oct-97 www.vishay.com faxback 408-970-5600 2-5

0 4 8 12 16 20 02468 0 2 4 6 8 10 0246810 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 50 25 0 25 50 75 100 125 150 0 0.08 0.16 0.24 0.32 0.40 03691215 0 100 200 300 400 500 600 700 0 6 12 18 24 30 0 4 8 12 16 20 02468 v gs = 10, 9, 8, 7, 6 v 4 v v gs = 10 v v ds = 10 v i d = 2.5 a v gs = 10 v i d = 2.5 a c rss c oss c iss output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs on-resistance ( r ds(on) w ) i d drain current (a) capacitance on-resistance vs. junction temperature t j junction temperature ( c) (normalized) on-resistance ( r ds(on) w ) 125 c t c = 55 c 25 c v gs = 4.5 v 5 v 3 v
SI6543DQ vishay siliconix www.vishay.com faxback 408-970-5600 2-6 document number: 70181 s-49534erev. c, 06-oct-97

single pulse power time (sec) power (w) 30 25 20 15 10 5 0 0.01 0.1 1 10 30 0 0.1 0.2 0.3 0.4 0.5 0246810 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 1. duty cycle, d = 2. per unit base = r thja = 125 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 notes: 4. surface mounted p dm t 2 0.4 0.2 0.0 0.2 0.4 0.6 0.8 50 25 0 25 50 75 100 125 150 1 10 20 i d = 2.5 a i d = 250 m a source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) w ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) variance (v) v gs(th) t j = 25 c t j = 150 c

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